Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

53 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 100μA

Power Dissipation (Max)  

190W Tc

Current - Continuous Drain (Id) @ 25℃  

73A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Published  

2006

Packaging  

Tube

Series  

HEXFET®

Operating Temperature  

-55°C~175°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Resistance  

14mOhm

Voltage - Rated DC  

100V

Terminal Form  

GULL WING

Current Rating  

73A

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

14m Ω @ 44A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3550pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

140nC @ 10V

Rise Time  

87ns

Vgs (Max)  

±20V

Fall Time (Typ)  

70 ns

Continuous Drain Current (ID)  

73A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

290A

Dual Supply Voltage  

100V

Recovery Time  

53 ns

Nominal Vgs  

4 V

Width  

9.65mm

Height  

4.826mm

Length  

10.668mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free